NAND

Toshiba Memory Corp. (TMC) on Thursday disclosed that Stacy Smith, a former high-ranking exec of Intel, was appointed executive chairman, effective October 1. Mr. Smith brings a wealth of experience when it comes to strategic and operative management to the maker of NAND flash memory and products on its base. Stacy Smith worked from 1988 to 2018 at Intel, serving at different positions. Most recently, he was President of Manufacturing Operations and Sales, hosting Intel's Manufacturing day, and was formerly (2006-2016) Intel's CFO. As chief financial officer, he was responsible for corporate strategy, mergers & acquisitions, finances, and the Intel Capital investment arm. Before that, he was CIO and vice president for sales on EMEA. During Mr. Smith’s tenure as CFO, Intel not only transformed...

Toshiba Memory and Western Digital Open Fab 6 and New Memory R&D Center

Toshiba Memory and Western Digital on Wednesday officially opened up their new Fab 6 and Memory R&D Center. Both facilities are located at their Yokkaichi operations site that now...

6 by Anton Shilov on 9/20/2018

Micron to Expand Its Fab 6 in Virginia, Build New R&D Center

Micron this week announced plans to expand production of DRAM and NAND memory at its fab in Manassas, Virginia. In total, Micron intends to invest $3 billion into the...

11 by Anton Shilov on 8/31/2018

Flash Memory Summit 2018, Yangtze Memory Technology Keynote Live Blog: Unleashing 3D NAND

The final talk of this session is from Yangtze Memory Technology (YMTC). We published their announcement this week, but they have set a very interesting talk for the show...

4 by Ian Cutress & Billy Tallis on 8/7/2018

Flash Memory Summit 2018, SK Hynix Keynote Live Blog: NAND Development

Second keynote of the session is SK Hynix

1 by Ian Cutress & Billy Tallis on 8/7/2018

Flash Memory Summit 2018, Micron Keynote Live Blog: QLC Flash

The afternoon keynote session has talks from Micron, SK Hynix, and YMTC, speaking all about future Flash products. This first talk is titled 'QLC Flash: Metting the Challenges of...

0 by Ian Cutress & Billy Tallis on 8/7/2018

Flash Memory Summit, Toshiba Keynote Live Blog

We're here at Flash Memory Summit! One of the first keynotes of the event is Toshiba, speaking about their use of Flash.

0 by Ian Cutress & Billy Tallis on 8/7/2018

SK Hynix Set to Build a New Memory Fab

SK Hynix last week announced plans to build another semiconductor fab near its headquarters in Icheon, South Korea. The production facility is not going to be as big and...

16 by Anton Shilov on 7/30/2018

Intel and Micron To Dissolve 3D XPoint Partnership After 2019

A press release from Intel today has clarified the state of the 3D XPoint Joint Venture the company has with Micron. Currently Intel and Micron co-developed the new class...

19 by Ian Cutress on 7/16/2018

We Found a Prototype 4 TB Intel QLC SSD

The storage industry is getting exciting again. In order to increase capacity of NAND SSDs and lower costs, there are two different routes being taken: either increase the number...

48 by Anton Shilov on 6/9/2018

Toshiba Memory to Build New Fab to Produce BiCS 3D NAND

Toshiba Memory Corp., which is set to become independent from Toshiba in a few days, has announced their intention to start construction of a new BiCS 3D NAND fab...

7 by Anton Shilov on 5/29/2018

Western Digital: 96-Layer 3D NAND Progressing Well, Shipping to Retail Customers

Western Digital this month said that it had started shipments of its fourth-generation BiCS 3D NAND memory to some of its customers. The company did not disclose details, but...

30 by Anton Shilov on 5/29/2018

Micron Starts Construction of Its Third NAND Fab in Singapore

Micron this week broke ground on its new fab in Singapore that will be dedicated to manufacturing 3D NAND flash memory. Set to be completed late next year, Micron...

12 by Anton Shilov on 4/6/2018

Unlimited 5 Year Endurance: The 100TB SSD from Nimbus Data

Nimbus Data on Monday introduced its new lineup of ultra-high capacity SSDs designed to compete against nearline HDDs in data centers. The ExaDrive DC drives use proprietary controllers and...

26 by Anton Shilov on 3/19/2018

Power Outage at Samsung’s Fab Destroys 3.5% of Global NAND Flash Output For March

A half-hour power outage at Samsung’s fab near Pyeongtaek, South Korea, disrupted production and damaged tens of thousands of processed wafers. Media reports claim that the outage destroyed as...

62 by Anton Shilov on 3/16/2018

Samsung Preps to Build Another Multi-Billion Dollar Memory Fab Near Pyeongtaek

Samsung has begun preparations to build another semiconductor production facility near Pyeongtaek, South Korea. The fab will produce various types of memory as the market demands, and if unofficial...

16 by Anton Shilov on 3/1/2018

Samsung Begins Mass Production of 256 GB eUFS Devices for Automotive Applications

Samsung has announced that it has started mass production of eUFS 2.1-compatible storage devices for automotive applications. The new 256 GB devices support select UFS 3.0 features for vehicles...

6 by Anton Shilov on 2/12/2018

JEDEC Publishes UFS 3.0 Spec: Up to 2.9 GB/s, Lower Voltage, New Features

JEDEC this week published their UFS 3.0 specification, which is intended to bring numerous performance, power and feature set-related improvements to the standard. The version 3.0 of the spec...

13 by Anton Shilov on 1/31/2018

Integral Launches 512 GB microSDXC Card: UHC-I, U1, Class 10

Integral Memory has released the industry’s highest-capacity microSDXC memory card that one can buy today. Integral’s new 512 GB microSDXC V10, UHS-I U1 card can store half of a...

23 by Anton Shilov on 1/25/2018

Lite-On and Tsinghua Unigroup Create $100 Million Joint Venture for SSD Operations in China

Lite-On has announced that it had signed an agreement with Tsinghua Unigroup to establish a joint venture in China. The JV will develop and build SSDs in Suzhou. The...

6 by Anton Shilov on 1/5/2018

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