DDR5

Samsung late on Wednesday said that it had initiated mass production of DDR4 memory chips using its second generation '10 nm-class' fabrication process. The new manufacturing technology shrinks die size of the new DRAM chips and improves their performance as well as energy efficiency. To do that, the process uses new circuit designs featuring air spacers (for the first time in DRAM industry). The new DRAM ICs (integrated circuits) can operate at 3600 Mbit/s per pin data rate (DDR4-3600) at standard DDR4 voltages and have been validated with major CPU manufacturers already. As it usually happens with Samsung’s major DRAM-related announcements, the news today consists of two parts: the first one is about the new DDR4 IC itself, the second part is about the second...

JEDEC: DDR5 to Double Bandwidth Over DDR4, NVDIMM-P Specification Due Next Year

JEDEC made two important announcements about the future of DRAM and non-volatile DIMMs for servers last week. Development of both is proceeding as planned and JEDEC intends to preview...

37 by Anton Shilov on 4/3/2017

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