238 Layer

SK Hynix announced this week that it had started volume production of its 238-layer TLC NAND memory. The new device promises higher bit density and lower NAND bits cost for the manufacturer and enables ultra-high-performance SSDs as it features a very high interface speed of 2400 MT/s. SK Hynix's first 238-layer 3D TLC NAND device has a 512 Gb capacity (64 GB). It has a number of benefits when compared to its 176-layer predecessor, including a 34% higher manufacturing efficiency (i.e., smaller die size, lower usage of materials, and expensive process steps, etc.), a 21% lower power consumption during read operations thanks to the ONFI 5.0 interface with the NV-LPDDR4 signaling method, and a 2400 MT/s interface transfer rate, which is a 50% increase. The latter...

SK hynix Announces 238 Layer NAND - Mass Production To Start In H1'2023

As the 2022 Flash Memory Summit continues, SK hynix is the latest vendor to announce their next generation of NAND flash memory at the show. Showcasing for the first...

9 by Ryan Smith on 8/4/2022

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