TLC NAND

Samsung has started mass production of their fifth generation of 3D NAND flash memory, which they brand as V-NAND. This new generation bumps the layer count from 64 up to 96 (officially, "more than 90" layers), providing further density increases without incurring the endurance and reliability costs that came with process shrinks for planar NAND flash memory. Samsung first announced their 96L V-NAND at Flash Memory Summit in August 2017. The fifth generation V-NAND also includes performance enhancements, most significantly a Toggle DDR 4.0 interface running at 1.4Gbps, compared to the 800Mbps interface speed of Samsung's previous 3D NAND. A reduction of operating voltage from 1.8V to 1.2V offsets the extra power consumption that faster interface speed would otherwise bring. Samsung is also citing improvements...

Samsung’s Multi-Billion Fab in Pyeongtaek Starts Production of 64-Layer V-NAND

Samsung on Tuesday announced that it had started mass production of 64-layer V-NAND memory in its newly build fab in Pyeongtaek, South Korea, and the first batch had already...

17 by Anton Shilov on 7/6/2017

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