Micron this week announced that it had started mass production of its first LPDDR4X memory devices using its second-generation 10 nm-class process technology. The new memory devices offer standard LPDDR4X data transfer rates of up to 4.266 Gbps per pin and consumes less power than earlier LPDDR4 chips. Micron’s LPDDR4X devices are made using the company’s 1Y-nm fabrication tech and feature a 12 Gb capacity. The manufacturer says that its LPDDR4X memory chips consume 10% less power when compared to its LPDDR4-4266 products; this is because they feature a lower output driver voltage (I/O VDDQ), which the LPDDR4X standard reduces by 45%, from 1.1 V to 0.6 V. Micron’s 12 Gb (1.5 GB) LPDDR4X devices feature a slightly lower capacity than competing 16 Gb (2 GB...
Samsung this week announced that it has begun manufacturing its new LPDDR4X memory chips using its second-generation 10 nm-class fabrication process (which is traditionally called 1y nm). The new...12 by Anton Shilov on 7/27/2018
SK Hynix on Monday officially announced the industry’s first 8 GB LPDDR4X (LP4X) packages for next-generation mobile devices. The new memory chips not only increase DRAM performance but also...5 by Anton Shilov on 1/11/2017