Samsung late on Wednesday said that it had initiated mass production of DDR4 memory chips using its second generation '10 nm-class' fabrication process. The new manufacturing technology shrinks die size of the new DRAM chips and improves their performance as well as energy efficiency. To do that, the process uses new circuit designs featuring air spacers (for the first time in DRAM industry). The new DRAM ICs (integrated circuits) can operate at 3600 Mbit/s per pin data rate (DDR4-3600) at standard DDR4 voltages and have been validated with major CPU manufacturers already. As it usually happens with Samsung’s major DRAM-related announcements, the news today consists of two parts: the first one is about the new DDR4 IC itself, the second part is about the second...
Samsung Electronics has started to manufacture DDR4 memory using its new '10nm class' production technology. '10nm class', by definition, implies sub-20nm but without fully disclosing the methodology, similar to...36 by Anton Shilov on 4/7/2016
After talking about Avoton and Bay Trail on Twitter, I was approached by the company heading up the marketing and PR for I’M Intelligent Memory regarding a few new...61 by Ian Cutress on 2/11/2014