Samsung PC3700: DDR466 Memory for the Masses

Test Results: Samsung PC3700

To test overclocked stability, we used the very demanding Gun Metal 2 - Benchmark 2, which pushes systems with its DX9 routines. To be considered stable for test purposes, Gun Metal, our Quake3 benchmark, UT2003 Demo, Super PI, Halo, and Comanche 4 had to complete without incident. Any of these, and in particular, Super PI and Gun Metal, will crash a less-than stable memory configuration.

Samsung PC3700 (DDR466) - 4 x 256Mb Double-Bank
Speed	Memory Timings & Voltage	Quake3 fps	Sandra UNBuffered	Sandra Standard Buffered	Super PI 2M places (time in sec)
400DDR 800FSB	2.5-3-3-5 2.5V	319.2	INT 2635 FLT 2684	INT 4436 FLT 4429	132
466DDR 933FSB	2.5-3-4-6 2.65V	364.81	INT 3027 FLT 3113	INT 5084 FLT 5078	115
500DDR 1000FSB	3-3-4-6 2.5V	392.8	INT 3418 FLT 3414	INT 5525 FLT 5520	107
535DDR 1070FSB	3-4-4-8 2.75V	412.3	INT 3332 FLT 3318	INT 5760 FLT 5806	100

Performance at DDR400 is in-line with Samsung's spec of CAS 2.5 operation at DDR333. We were not able to achieve CAS 2.0 at DDR400 with the Samsung modules. While this is slower than what we have seen on recently tested modules at DDR400, the actual benchmark performance is closer than you might expect to the performance of other high-speed modules at DDR400. While other modules outperform Samsung at DDR400, the PC3700 performance was still very solid.

The most surprising finding was the tremendous headroom of the Samsung DDR466 modules. Rated at DDR466, we were able to achieve stable operation to DDR535. This is as good as we have found on many DIMMs rated at DDR500, and is excellent headroom for a DDR466 rated module.

Samsung specifies the JEDEC standard 2.6V +/- 0.1V for the memory voltage and test results confirmed this specification. Increasing memory voltage to 2.85V did not improve stability or allow a higher overclock.