Interestingly enough, we’re seeing something of a division in the mobile storage space, as it seems that some OEMs are focusing their efforts on UFS for internal storage, while others are moving towards NVMe over mobile PCI-E. Samsung Electronics seems to be staying with UFS for now, and recently announced their next generation of UFS 2.0 embedded storage solutions, which use 3D V-NAND to enable better NAND storage characteristics and to bump up the capacity from 128GB to 256GB. By moving to V-NAND, random reads and writes are now at 45k and 40k IOPS, or 176 and 156 MB/s with 4KB blocks, which is well over double what shipped in the Galaxy S6. For sequential reads, speeds top out as high as 850 MB/s which...

Samsung Announces 128GB UFS Storage For Smartphones

We've first heard about plans to adopt UFS (Universal Flash Storage) with the announcements of Toshiba and Qualcomm reported over a year ago. While the promised late 2014 schedule...

31 by Andrei Frumusanu on 2/25/2015

Toshiba and Qualcomm Set to Introduce UFS 2.0 Solutions in 2014

Since they first started showing up on the market, most smartphones and tablets have used eMMC flash storage. While in some ways similar to the NAND flash used in...

8 by Jarred Walton on 1/14/2014

Log in

Don't have an account? Sign up now