Looking to the Future:
International Technology Roadmap for Semiconductors 2.0

The ten year anniversary of Conroe comes at a time when the International Technology Roadmap for Semiconductors report into the next 10-15 years of the industry has been officially launched to the public. This biennial report is compiled by a group of experts in the semiconductor industry from the US, Europe and Asia and is designed to help the industry dictate which path to focus R&D for the next 10-15 years, and runs for nearly 500 pages. While we could go into extensive detail about the contents, we plan to give a brief overview here. But for people interested in the industry, it’s a great read for sure.

The report includes deep discussions regarding test equipment, process integration, radio frequency implementations (RF), microelectromechanical systems (MEMs), photolithography, factory integration, assembly, packaging, environmental issues, improving yields, modeling/simulation and emerging materials. With a focused path to a number of technologies, the hope is that leading contenders in each part of the industry can optimize and improve efficiency in directional research and development, with the possibility of collaboration, rather than taking many different routes.

Obviously such a report is going to make successful and unsuccessful predictions, even with a group of experts, based on the introduction of moonshot style features (FinFET) or unforeseen limitations in future development. For example, here is the first roadmap published by the Semiconductor Industry Association in the first report in 1993:


Original 1993 Semiconductor Industry Association roadmap

As we can see, by 2007 it was predicted that we would be on 10nm 100nm chips with up to 20 million ‘gates’, up to 4GB of SRAM per chip and 1250mm2 of logic per die. Up to 400mm wafers were expected in this timeframe, with 200W per die and 0.002 defects per square cm (or 5.65 errors per 300mm wafer).

Compare that to 2016, where we have 16/14nm lithography nodes running 300mm wafers producing 15 billion transistors on a 610mm2 die (NVIDIA P100). Cache currently goes up to 60-65MB on the largest chips, and the power consumption of these chips (the ASIC power) is around 250W as well. So while the predictions were a slow on the lithography node, various predictions about the integration of components onto a base processor were missed (memory controllers, chipsets, other IO).

What makes the most recent report different is that it is listed as the last report planned by ITRS, to be replaced by a more generalized roadmap for devices and systems, the IRDS as the utility of semiconductors has changed over the last decade. In this last report, a number of predictions and focal points have been picked up by the media, indicating a true end to Moore’s Law and how to progress beyond merely shrinking lithography nodes beyond 7nm. Part of this comes from the changing landscape, the move to IoT and the demand for big data processing and storage, but also the decrease in the profitability/performance gain of decreasing node sizes in comparison to their cost to develop is, if believed, set to put a paradigm shift in integrated circuit development. This applies to processors, to mobile, to DRAM and other industry focal points, such as data centers and communications.

I do want to quote one part of the paper verbatim here, as it ties into the fundamental principles of the future of semiconductor engineering:

“Moore’s Law is dead, long live Moore’s Law”

The question of how long will Moore’s Law last has been posed an infinite number of times since the 80s and every 5-10 years publications claiming the end of Moore’s Law have appeared from the most unthinkable and yet “reputedly qualified” sources. Despite these alarmist publications the trend predicted by Moore’s Law has continued unabated for the past 50 years by morphing from one scaling method to another, where one method ended the next one took over. This concept has completely eluded the comprehension of casual observes that have mistakenly interpreted the end of one scaling method as the end of Moore’s Law. As stated before, bipolar transistors were replaced by PMOS that were replaced by NMOS that were also replaced by CMOS. Equivalent scaling succeeded Geometrical Scaling when this could not longer operate and now 3D Power Scaling is taking off.

By 2020-25 device features will be reduces to a few nanometers and it will become practically impossible to reduce device dimensions any further. At first sight this consideration seems to prelude to the unavoidable end of the integrated circuit era but once again the creativity of scientists and engineers has devised a method ‘To snatch victory from the jaws of defeat’.

Core: Performance vs. Today Looking To The Future: 450mm Wafers in 2021, and Down to ‘2nm’
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  • Akrovah - Wednesday, July 27, 2016 - link

    My old E6700 is still alive and kicking. I only just replaced it as my primary system when Devil's Canyon came along. Still use it for my four year old's "first computer."
  • djayjp - Wednesday, July 27, 2016 - link

    Not a particle physicist, nor electrical engineer, so just some pie in the sky wondering here, but wouldn't it be possible to build transistors using carbon nanotubes, or light itself (using nano sized mirrors/interferometers, like DLP) or even basing the transistor gates off of protons/sub atomic particles?
  • michael2k - Wednesday, July 27, 2016 - link

    I think a more interesting question is using glass as a substrate. Imagine printing nand, CPU, GPU, ram, and along the bezels of a smartphone.

    That reduces a phone to six components: a display, a transducer for sound, a mic, a battery, a radio, and a chassis, which would have all the antennas.
  • joex4444 - Wednesday, July 27, 2016 - link

    Particle physicist here. Light has the tricky property that it travels at the speed of light so I can't imagine it working but perhaps I'm envisioning your concept differently than you are. For carbon nanotubes, you'll need a materials engineer or a condensed matter physicist.
  • 3DoubleD - Wednesday, July 27, 2016 - link

    Materials/Semiconductor Physics Engineer here. The problem is not what we CAN do, the problem is what is economically possible at scale. For example, FinFETs were demonstrated at the turn of the century, but took all of those years to become (1) necessary - planar transistor were getting too leaky, and (2) possible to fabricate economically in large scales.

    Researchers have created smaller, faster transistors years ago, but it takes a lot of time and effort to develop the EUV or quadruple patterning technologies that enable these devices to be reliably and affordably manufactured.

    So I think the problem in moving "beyond silicon" is not that we don't have alternatives, it is that we have many alternatives, we just don't know which will scale. It becomes less of a purely engineering problem and manufacturing business problem. When new technologies relied purely on the established silicon industry alone, you could reasonably extrapolate how much each new technology would cost as the nodes were scaled down. When we talk about using III-V FinFETs/ All Around Gates or graphene and carbon nanotubes, we don't really know how those things will scale with the existing processes as we move them from the laboratory to the manufacturing line.

    I've been looking forward to this transition for years. People moan that it is the end of Moores Law, but that could be a good thing. Silicon is a great material for forming logic circuits for many reasons, but it also has many downsides. While silicon never reached 10 GHz (as Intel once predicted), other materials easily blow past 100 GHz transistor switching speeds. When the massive engines that work tirelessly to reduce our lithography nodes nm by nm are aimed at "the next big thing", we might be pleasantly surprised by a whole new paradigm of performance.

    So what competes with modern day Si CMOS on speed, power usage, and cost? Nothing... yet!
  • djayjp - Thursday, July 28, 2016 - link

    Yes, it's fascinating stuff. Thanks for reminding me about that. I recall now that I think it was graphene that enabled those insanely high switching speeds, due to its incredible conductivity/efficiency. Hopefully it can now be made economically feasible at some point! Imagine a the next GPU that is 10x smaller and operates at 100x the clock speed. A GTX 1080Ti x 1000! Finally we can do real time true global illumination ha....
  • jeffry - Monday, August 1, 2016 - link

    Thats a good point. Like, answering a question "are you willing to pay $800 for a new CPU to double the computers speed?" Most consumers say no. It all comes down to the mass market price.
  • wumpus - Thursday, August 4, 2016 - link

    From the birth of the Univac until 10 years ago, consumers consistently said YES! and plunked down their money. Doubling the (per thread) speed of a core2duo is going to cost more than $800. Also the cost of the RAM on servers is *WAY* more than $800, so you can expect if Intel could double the power of each core, they could crank prices up by at least $800 per core on Xeons. They can't, and neither can IBM or AMD.
  • Jaybus - Thursday, July 28, 2016 - link

    Sure, but that speed is dependent on the medium. There are some proposed optical transistors using electromagnetically induced transparency. Long way off. However, silicon photonics could change some things. Capacitance is the killer for electronic interconnects, whether chip-to-chip or on-chip bus. An optical interconnect could greatly increase bandwidth without increasing the chip's power dissipation. I think an electronic-photonic hybrid is more likely, since silicon photonics components can be made on a CMOS process. We are already beginning to see optical PCI Express being deployed. I could definitely see a 3D approach where 2D electronic layers are connected through an optical rather than electronic bus.
  • djayjp - Thursday, July 28, 2016 - link

    Yes, transparency, like polarized windows that either become transparent or opaque when a current is applied (to the liquid crystals?). I wonder how small they could be made. It would be incredibly power efficient I would think.

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