Memory

Team Group has introduced its new dual-channel DDR4 memory kits for overclockers - the new T-Force Xtreem kits operate at 4300 MT/s and 4500 MT/s data transfer rates. Team Group’s latest T-Force Xtreem DDR4-4300 and DDR4-4500 dual-channel kits feature a 16 GB capacity (8 GB × 2), CL18 20-20-44 timings, and 1.45 V supply. The modules use specially-designed 10-layer PCBs as well as cherry-picked Samsung’s 8 Gb B-die DRAM chips that can run at extreme speeds. The voltages are a step above the standard 1.4 V for high-end kits. As usual, the high-performance memory modules support XMP 2.0 SPD profiles for easier setup of DRAM sub-timings. Furthermore, to ensure efficient cooling for DDR4 chips and grant its modules a unique look, Team Group equips its T-Force...

Toshiba Memory and Western Digital Open Fab 6 and New Memory R&D Center

Toshiba Memory and Western Digital on Wednesday officially opened up their new Fab 6 and Memory R&D Center. Both facilities are located at their Yokkaichi operations site that now...

3 by Anton Shilov 8 hours ago

Samsung Adds 32 GB UDIMMs to Memory Lineup

Samsung has quietly added 32 GB unbuffered DDR4 memory modules to its lineup of products. The UDIMMs are based on the company’s 16 Gb chips, which were introduced earlier...

19 by Anton Shilov on 9/5/2018

Micron to Expand Its Fab 6 in Virginia, Build New R&D Center

Micron this week announced plans to expand production of DRAM and NAND memory at its fab in Manassas, Virginia. In total, Micron intends to invest $3 billion into the...

11 by Anton Shilov on 8/31/2018

Hot Chips 2018: Nanotubes as DRAM from Nantero, a Live Blog

Lots of different types of 'RAM' have been in the news, most noticably Intel's Optane memory and a couple of weeks ago at Flash Memory Summit we had the...

16 by Ian Cutress on 8/21/2018

Inno3D Releases iChill Memory Modules with RGB LEDs, Up to DDR4-4000

Inno3D is primarily known for its graphics cards featuring highly custom cooling systems, but apparently the company has decided to expand its business beyond that. This week Inno3D introduced...

1 by Anton Shilov on 8/14/2018

Flash Memory Summit, Western Digital Keynote Live Blog

Second Keynote for us: Western Digital

0 by Ian Cutress & Billy Tallis on 8/7/2018

MRAM Developer Day, IBM Keynote Live Blog

Third Keynote in this session is from IBM Research: STT-MRAM is Ready for Applications Today.

0 by Ian Cutress on 8/6/2018

MRAM Developer Day, GlobalFoundries Keynote Live Blog

Second Keynote today is from GlobalFoundries, Everspin's MRAM partner.

1 by Ian Cutress on 8/6/2018

MRAM Developer Day, Everspin Keynote: The MRAM Revolution (9:15am PT, 4:15pm UTC)

Prior to Flash Memory Summit, the first order of business is the MRAM Developer Day. The key talks today revolve around Everspin, a leader in MRAM Technology, GlobalFoundries, and...

3 by Ian Cutress & Billy Tallis on 8/6/2018

Yangtze Memory Unveils Xtacking Architecture for 3D NAND: Up to 3 Gbps I/O

Yangtze Memory Technologies Co. (YMTC) on Monday unveiled key details regarding its Xtacking architecture that will be used for its upcoming 3D NAND flash memory chips. The company's technology...

7 by Anton Shilov on 8/6/2018

SK Hynix Set to Build a New Memory Fab

SK Hynix last week announced plans to build another semiconductor fab near its headquarters in Icheon, South Korea. The production facility is not going to be as big and...

16 by Anton Shilov on 7/30/2018

Samsung Starts Production of 16 Gb LPDDR4X Chips Using 2nd Gen 10nm Tech

Samsung this week announced that it has begun manufacturing its new LPDDR4X memory chips using its second-generation 10 nm-class fabrication process (which is traditionally called 1y nm). The new...

12 by Anton Shilov on 7/27/2018

Toshiba Begins to Construct New BiCS 3D NAND Fab in Iwate Prefecture

Toshiba Memory Corp. this week held a groundbreaking ceremony for its new BiCS 3D NAND flash memory fab, which is located in Japan's Iwate prefecture. Toshiba anticipates construction to...

5 by Anton Shilov on 7/25/2018

Western Digital Begins to Sample QLC BiCS4: 1.33 Tbit 96-Layer 3D NAND

Western Digital has started sampling its 96-layer 3D NAND chips featuring QLC architecture that stores four bits per cell. The chip happens to be the world’s highest-capacity 3D NAND...

40 by Anton Shilov on 7/20/2018

Samsung Announces First LPDDR5 DRAM Chip, Targets 6.4Gbps Data Rates & 30% Reduced Power

Samsung has been on a roll lately with memory & storage-related announcements, and that roll is continuing today with a new DRAM-related announcement out of the juggernaut. This afternoon...

14 by Ryan Smith on 7/16/2018

Intel and Micron To Dissolve 3D XPoint Partnership After 2019

A press release from Intel today has clarified the state of the 3D XPoint Joint Venture the company has with Micron. Currently Intel and Micron co-developed the new class...

19 by Ian Cutress on 7/16/2018

Zen and Vega DDR4 Memory Scaling on AMD's APUs

We have previously explored the importance of memory scaling within AMDs Ryzen CPUs: the question being answered today is how much of an effect on performance does the memory...

73 by Gavin Bonshor on 6/28/2018

Micron Begins Mass Production of GDDR6

This morning Micron is announcing that they’ve kicked off production of their next-generation GDDR6 memory. This next step in production comes on the heels of their internal qualification, which...

29 by Ryan Smith on 6/25/2018

Colorful to Branch Out to Memory Modules

One of the surprises that this year’s Computex brought was renewed interest of various hardware suppliers towards memory modules. We saw GIGABYTE and Antec launching their Aorus and Antec...

5 by Anton Shilov on 6/22/2018

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