GAAFET

This year, at the international VLSI conference, Intel’s CTO Mike Mayberry gave one of the plenary presentations, which this year was titled ‘The Future of Compute’. Within the presentation, a number of new manufacturing technologies were discussed, including going beyond FinFET to Gate-All-Around structures, or even to 2D Nano-sheet structures, before eventually potentially leaving CMOS altogether. In the Q&A at the end of the presentation, Dr. Mayberry stated that he expects nanowire transistors to be in high volume production within five years, putting a very distinctive mark in the sand for Intel and others to reach.

Samsung Announces 3nm GAA MBCFET PDK, Version 0.1

So what comes after 7nm, after 6nm, after 5nm, and after 4nm? That's right: 3nm! At Samsung's Foundry Forum event today, Samsung has announced that the first alpha version...

32 by Dr. Ian Cutress on 5/14/2019

Samsung Foundry Roadmap: EUV-Based 7LPP for 2018, 3 nm Incoming

Samsung Foundry this week updated its fabrication technology roadmap, introducing a number of changes and announcing the first details about its 3 nm manufacturing process that is several years...

25 by Anton Shilov on 5/24/2018

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