Samsung on Wednesday introduced its first consumer products based on its 16 Gb DDR4 memory chips demonstrated earlier this year. The new SO-DIMMs are aimed at high-performance notebooks that benefit from both speed and capacity of memory modules. Samsung’s new 32 GB DDR4 SO-DIMMs based on 16 Gb DDR4 memory ICs (integrated circuits) are rated for a 2666 MT/s data transfer rate at 1.2 V. Because the 16 Gb memory chips are made using Samsung’s 10 nm-class process technology, the new module is claimed to be 39% more energy efficient than the company’s previous-gen 16 GB SO-DIMM based on 20 nm-class ICs. According to Samsung, a laptop equipped with 64 GB of new memory consumes 4.578 W in active mode, whereas a notebook outfitted with...
Samsung is demonstrating its 64 GB DDR4 memory module based on 16 Gb chips this week at the OCP U.S. Summit. The 64 GB RDIMM that the company is...11 by Anton Shilov on 3/22/2018
SK Hynix has recently added single-die DDR4 memory chips featuring 16 Gb capacity to its product catalog. The benefit of the increase in single-die capacity is two fold: not...14 by Anton Shilov on 1/25/2018
SK Hynix has quietly added its new 8 GB LPDDR4 package to the family of mobile DRAM offerings. The new package paves the way for single-package smartphones and tablets...8 by Anton Shilov on 12/20/2016
Samsung this week announced its first LPDDR4 memory chips made using its 10nm-class DRAM fabrication technology. The new DRAM ICs feature the industry’s highest density of 16 Gb, are...40 by Anton Shilov on 10/21/2016