Samsung PC3700: DDR466 Memory for the Massesby Wesley Fink on March 15, 2004 11:39 PM EST
- Posted in
Test Results: Samsung PC3700To test overclocked stability, we used the very demanding Gun Metal 2 - Benchmark 2, which pushes systems with its DX9 routines. To be considered stable for test purposes, Gun Metal, our Quake3 benchmark, UT2003 Demo, Super PI, Halo, and Comanche 4 had to complete without incident. Any of these, and in particular, Super PI and Gun Metal, will crash a less-than stable memory configuration.
|Samsung PC3700 (DDR466) - 4 x 256Mb Double-Bank|
|Speed||Memory Timings & Voltage||Quake3 fps||Sandra UNBuffered||Sandra Standard Buffered||Super PI 2M places
(time in sec)
Performance at DDR400 is in-line with Samsung's spec of CAS 2.5 operation at DDR333. We were not able to achieve CAS 2.0 at DDR400 with the Samsung modules. While this is slower than what we have seen on recently tested modules at DDR400, the actual benchmark performance is closer than you might expect to the performance of other high-speed modules at DDR400. While other modules outperform Samsung at DDR400, the PC3700 performance was still very solid.
The most surprising finding was the tremendous headroom of the Samsung DDR466 modules. Rated at DDR466, we were able to achieve stable operation to DDR535. This is as good as we have found on many DIMMs rated at DDR500, and is excellent headroom for a DDR466 rated module.
Samsung specifies the JEDEC standard 2.6V +/- 0.1V for the memory voltage and test results confirmed this specification. Increasing memory voltage to 2.85V did not improve stability or allow a higher overclock.