Regardless of individual memory timing preferences, to obtain best RAM/chipset latency performance we recommend that the following BIOS functions are set as follows for Micron D9 based RAM modules.
Enhance Data transmitting: FAST
FAST MODE: Gives latency and bandwidth improvements over the "Normal" setting without overly affecting memory stability or FSB overclocking potential throughout the frequency ranges of interest for everyday use.
TURBO MODE: Is more suited to benchmarking runs. This is a very aggressive setting, further improving latencies past "Fast" mode. Using "Turbo" mode may require that the "CH1CH2 Common CLK Crossing Setting" is set to "Nominal" rather than "More Aggressive". VNB requirements are 1.7V and upwards, hence this should be used strictly for short-term benchmarking.
Enhance Addressing: FAST
This brings additional gains of latency and bandwidth used in combination with the above settings for best overall system performance. Again the stability/voltage requirement hit is only minor for normal PC use.
The difference of using FAST for these two settings together, over NORMAL mode, can be seen clearly in the following synthetic Everest Cache and Memory benchmark screenshots:
Although the BIOS defaults to Normal mode for both settings, there is no reason to veer away from setting FAST for both functions, provided you're using reasonable memory.
T2 Dispatch: Set this to Disabled, as it gives more overall stability when memory is clocked to high speeds.
Channel 1 CLK Crossing Setting: More Aggressive Channel 2 CLK Crossing Setting: More Aggressive CH1CH2 Common CLK Crossing Setting: More Aggressive
24/7 systems using Micron D9GMH based modules will certainly want to take advantage of using all three of these settings in unison for a latency and bandwidth boost. We have found these three functions set to "More Aggressive" do not hinder the boards FSB progress up to 470FSB for absolute stability. Other RAM modules may not fare as well, unfortunately.
Clock Fine delays: For Both Channels, the 913 BIOS senses and adjusts these values automatically when set to CURRENT mode. DFI has notified users that manual setting ranges should not exceed a margin of three digits either side of the CURRENT setting auto sense. There is some variance at higher FSB levels (over 465FSB on quad-cores). The settings correspond to the DRAM slots in use (the slots filled with RAM are the point of interest). It is worth noting stable ranges on paper and checking back when raising FSB levels to see how the CURRENT setting reacts to FSB changes. If instability is experienced at random between reboots, it may be worth reverting to earlier ranges by setting the scales manually from your notes.